型号:

IXFH88N20Q

RoHS:无铅 / 符合
制造商:IXYS描述:MOSFET N-CH 200V 88A TO-247
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IXFH88N20Q PDF
标准包装 30
系列 HiPerFET™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 200V
电流 - 连续漏极(Id) @ 25° C 88A
开态Rds(最大)@ Id, Vgs @ 25° C 30 毫欧 @ 44A,10V
Id 时的 Vgs(th)(最大) 4V @ 4mA
闸电荷(Qg) @ Vgs 146nC @ 10V
输入电容 (Ciss) @ Vds 4150pF @ 25V
功率 - 最大 500W
安装类型 通孔
封装/外壳 TO-247-3
供应商设备封装 TO-247
包装 管件
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